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                    K4B4G0446A-HYF8 [SAMSUNG]

                    DDR DRAM, 1GX4, CMOS, PBGA78, FBGA-78;
                    K4B4G0446A-HYF8
                    元器件型號: K4B4G0446A-HYF8
                    生產廠家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
                    描述和應用:

                    DDR DRAM, 1GX4, CMOS, PBGA78, FBGA-78

                    動態存儲器 雙倍數據速率 內存集成電路
                    PDF文件: 總61頁 (文件大?。?611K)
                    下載文檔:  下載PDF數據表文檔文件
                    型號參數:K4B4G0446A-HYF8參數
                    生命周期Obsolete
                    零件包裝代碼BGA
                    包裝說明TFBGA,
                    針數78
                    Reach Compliance Codeunknown
                    風險等級5.69
                    訪問模式MULTI BANK PAGE BURST
                    其他特性AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
                    JESD-30 代碼R-PBGA-B78
                    長度12.5 mm
                    內存密度4294967296 bit
                    內存集成電路類型DDR DRAM
                    內存寬度4
                    功能數量1
                    端口數量1
                    端子數量78
                    字數1073741824 words
                    字數代碼1000000000
                    工作模式SYNCHRONOUS
                    組織1GX4
                    封裝主體材料PLASTIC/EPOXY
                    封裝代碼TFBGA
                    封裝形狀RECTANGULAR
                    封裝形式GRID ARRAY, THIN PROFILE, FINE PITCH
                    認證狀態Not Qualified
                    座面最大高度1.2 mm
                    自我刷新YES
                    最大供電電壓 (Vsup)1.45 V
                    最小供電電壓 (Vsup)1.2825 V
                    標稱供電電壓 (Vsup)1.35 V
                    表面貼裝YES
                    技術CMOS
                    端子形式BALL
                    端子節距0.8 mm
                    端子位置BOTTOM
                    寬度10 mm
                    Base Number Matches1
                    高潮爽妇网

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