K4B4G0446A-HYF8 [SAMSUNG]
DDR DRAM, 1GX4, CMOS, PBGA78, FBGA-78;
| 元器件型號： | K4B4G0446A-HYF8 |
| 生產廠家： | 
SAMSUNG SEMICONDUCTOR
|
| 描述和應用： | DDR DRAM, 1GX4, CMOS, PBGA78, FBGA-78 動態存儲器 雙倍數據速率 內存集成電路 |
| PDF文件： | 總61頁 (文件大?。?611K) |
| 下載文檔： | 下載PDF數據表文檔文件 |
| 型號參數：K4B4G0446A-HYF8參數 | |
| 生命周期 | Obsolete |
| 零件包裝代碼 | BGA |
| 包裝說明 | TFBGA, |
| 針數 | 78 |
| Reach Compliance Code | unknown |
| 風險等級 | 5.69 |
| 訪問模式 | MULTI BANK PAGE BURST |
| 其他特性 | AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY |
| JESD-30 代碼 | R-PBGA-B78 |
| 長度 | 12.5 mm |
| 內存密度 | 4294967296 bit |
| 內存集成電路類型 | DDR DRAM |
| 內存寬度 | 4 |
| 功能數量 | 1 |
| 端口數量 | 1 |
| 端子數量 | 78 |
| 字數 | 1073741824 words |
| 字數代碼 | 1000000000 |
| 工作模式 | SYNCHRONOUS |
| 組織 | 1GX4 |
| 封裝主體材料 | PLASTIC/EPOXY |
| 封裝代碼 | TFBGA |
| 封裝形狀 | RECTANGULAR |
| 封裝形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 認證狀態 | Not Qualified |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 最大供電電壓 (Vsup) | 1.45 V |
| 最小供電電壓 (Vsup) | 1.2825 V |
| 標稱供電電壓 (Vsup) | 1.35 V |
| 表面貼裝 | YES |
| 技術 | CMOS |
| 端子形式 | BALL |
| 端子節距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 寬度 | 10 mm |
| Base Number Matches | 1 |
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